TIG067SS no. a1067-1/9 features ? low-saturation voltage ? 4.0v drive ? enhansment type ? built-in gate-to-emitter protection diode ? high speed switching ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-emitter voltage (dc) v ces 400 v collector-to-emitter voltage (pulse) v cesp pw 1ms 450 v gate-to-emitter voltage (dc) v ges 6 v gate-to-emitter voltage (pulse) v gesp pw 1ms 8 v collector current (pulse) i cp c m =600 f 150 a maximum collector-to-emitter dv / dt dv / dt v ce 320v, starting tch=25 c 1500 v / s allowable power dissipation p d when mounted on fr4 substrate (11,680mm 2 1.6mm) 1.2 w channel temperature tch 150 c storage temperature tstg -40 to +150 c package dimensions unit : mm (typ) 7072-002 ordering number : ena1067 o0312pj tkim tc-00002673 sanyo semiconductors data sheet TIG067SS n-channel igbt light-controlling flash applications http://www.sanyosemi.com/en/network/ product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2500 pcs./reel packing type: tl marking electrical connection 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collector 6 : collector 7 : collector 8 : collector sanyo : soic8 tl tig 067 lot no. 1 to 3 5 to 8 4 TIG067SS-tl-2w
TIG067SS no. a1067-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =2ma, v ge =0v 400 v collector-to-emitter cutoff current i ces v ce =320v, v ge =0v 10 a gate-to-emitter leakage current i ges v ge =6v, v ce =0v 10 a gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 0.4 1.0 v collector-to-emitter saturation voltage v ce (sat) i c =150a, v ge =4v 3.8 5 v input capacitance cies v ce =10v, f=1mhz 5100 pf output capacitance coes 59 pf reverse transfer capacitance cres 43 pf fall time t f i c =150a, v cc =320v, resistor load v ge =4v, r g =36 270 ns fig1 large current r load switching circuit note1. gate series resistance r g 36 is recommended for protection purpose at the time of turn off. however, if dv / dt 1500 / s is satis ed at customer?s actual set evaluation, r g < 36 can also be used. note2. the collector voltage gradient dv / dt must be smaller than 1500v / s to protect the device when it is turned off. ordering information device package shipping memo TIG067SS-tl-2w soic8 2,500pcs./reel pb free and halogen free 100k c m r l r g v cc + TIG067SS 4v 0v
TIG067SS no. a1067-3/9 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge gate-to-emitter voltage, v ge -- v collector current, i c -- a case temperature, tc -- c gate-to-emitter cutoff voltage, v ge (off) -- v v ge (off) -- tc collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v case temperature, tc -- c v ce (sat) -- tc collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v cies, coes, cres -- pf cies, coes, cres -- v ce it15739 05075 100 125 150 25 --25 --50 5 6 4 3 1 2 i c =150a v ge =4v 4 3 1 2 it15736 it15738 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc= --25 c i c =150a 4 3 1 2 it15737 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc=25 c i c =150a 100a it15540 0 50 75 100 125 150 25 --25 --50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0161820 68 41214 10 2 10 100 7 5 3 2 10000 1000 7 5 3 2 7 5 3 2 it15741 cies coes cres f=1mhz 4 3 1 2 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc= 75 c i c =150a v ce =10v i c =1ma 130a it15734 0 0 25 50 75 125 100 200 150 175 it15735 0 0 12 5 7 69 8 34 10 25 50 75 175 125 100 200 150 1.0 1.5 0.5 2.0 3.0 2.5 5.0 4.0 4.5 3.5 v ge =5.0v 4.0v 3.0v v ce =5v 2.5v 25 c 75 c tc= - -25 c tc=25 c
TIG067SS no. a1067-4/9 sw time -- r g switching time, sw time -- ns sw time -- i cp switching time, sw time -- ns gate-to-emitter voltage, v ge -- v collector current (pulse), i cp -- a collector current (pulse), i cp -- a collector current (pulse), i cp -- a maximum capacitor, c m -- f c m -- i cp i cp -- v ge dv / dt -- r g gate series resistance, r g -- turn off dv / dt -- v / s gate series resistance, r g -- dv / dt -- turn off i c turn off collector current, turn off i c -- a dv / dt, dv / dt -- v / s it15747 20 40 60 80 100 120 140 0 180 160 200 100 0 300 400 500 600 700 800 v ge =4v v ce =320v it15746 34 7 689 5 2 1 0 0 20 40 60 80 100 120 140 180 160 tc 70 c c m =600 f it15745 50 60 70 90 80 100 30 20 40 10 0 0 500 1000 1500 2500 2000 3000 switching test circuit fig.1 v ge =4v v cc =320v i cp =150a tc=25 c tc=70 c it15748 20 40 60 80 100 120 140 0 180 160 0 250 500 750 1250 1000 1750 1500 2000 tc 70 c v ce =320v 23 57 3 2 100 10 it15923 1000 3 2 2 7 5 3 7 5 3 2 100 10 t r t d (off) t d (on) t f 0 20406080 120 100 it15924 1000 7 7 5 3 2 100 3 5 3 2 2 t r t d (off) t d (on) t f switching test circuit fig.1 v ge =4v v cc =320v r g =36 switching test circuit fig.1 v ge =4v v cc =320v i cp =150a c m =600 f pw=50 s p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0.8 1.2 1.0 1.4 0.4 0.2 0.6 0 0 160 140 120 100 80 60 40 20 it16955 when mounted on fr4 substrate (11,680mm 2 ? 1.6mm)
TIG067SS no. a1067-5/9 de nition of dv/dt dv/dt is de ned as the maximum slope of the below v ce curve during turn-off period. dv/dt= v ce / t= v ce /100ns overall waveform enlarged picture of turn-off period de nition of switching time v ge v ce i c v ge :10% v ce :90% v ge :90% v ce :10% v ce :10% t d (on) t d (off) t r t f i c :90% i c :10% t t t v,i v ce i c i cp turn off i c t turn-off period t=100ns v ce v ce turn off v ce
TIG067SS no. a1067-6/9 taping speci cation TIG067SS-tl-2w 3 d f n l q j ) r u p d w 0 d [ l p x p 1 x p e h u r i g h y l f h v f r q w d l q h g s f v 3 d f n l q j i r u p d w 3 d f n d j h 1 d p h & d u u l h u 7 d s h 7 \ s h 5 h h o , q q h u e r [ 2 x w h u e r [ , q q h u % 2 ; : 2 x w h u % 2 ; : 6 2 , & % u h h o v f r q w d l q h g ' l p h q v l r q v p p h [ w h u q d o ? ? l q q h u e r [ h v f r q w d l q h g ' l p h q v l r q v p p h [ w h u q d o ? ? / d e h o - ( , 7 $ 3 k d v h / ( $ ' ) 5 ( ( - ( , 7 $ 3 k d v h 7 < 3 ( & 2 ' (
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TIG067SS no. a1067-7/9 7 d s l q j f r q i l j x u d w l r q & d u u l h u w d s h v l ] h x q l w p p ' h y l f h s o d f h p h q w g l u h f w l r q 3 d f n l q j w \ s h????? 7 / / h d g h u s r u w l r q d q g w u d l o h u s r u w l r q x q l w p p? r u p r u h 7 u d l o h u s r u w l r q ' h y l f h p r x q w l q j s r u w l r q / h d g h u s r u w l r q r u p r u h , g o h s r u w l r q r u p r u h & r y h u w d s h / h d g h u s r u w l r q r u p r u h ' h y l f h p r x q w l q j s r u w l r q s s s ??? ??????? s s s s s s s feed d i rec t ion 5 h h o & d u u l h u 7 d s h 7 / 3 l q , q g h [ ) h h g 5 r x q g + r o h
TIG067SS no. a1067-8/9 outline drawing land pattern example TIG067SS-tl-2w mass (g) unit 0.082 * for reference mm unit: mm 1.75 1.27 0.65 5.60
TIG067SS no. a1067-9/9 ps this catalog provides information as of october, 2012. speci cations and information herein are subject to change without notice. note : TIG067SS has protection diode between gate and emitter but handling it requires suf cient care to be taken. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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